november 2013 fch47n60_f085 n-channel mosfet ?2013 fairchild semiconductor corporation fch47n60_f085 rev. c2 www.fairchildsemi.com 1 fch47n60_f085 n-channel mosfet 600v, 47a, 79 m features ? typ r ds(on) = 64m at v gs = 10v, i d = 47a ? typ q g(tot) = 187nc at v gs = 10v, i d = 47a ? uis capability ? rohs compliant ? qualified to aec q101 description superfet tm is fairchild?s proprietary new generation of high voltage mosfets utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize conduction loss, provide superi or switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet is suitable for various automotive dc/dc power conversion. mosfet maximum ratings t j = 25c unless otherwise noted symbol parameter ratings units v dss drain to source voltage 600 v v gs gate to source voltage 30 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 47 a pulsed drain current t c = 25c see figure4 e as single pulse avalanche energy (note 2) 810 mj p d power dissipation 417 w derate above 25 o c3.3w/ o c t j , t stg operating and storage temperature -55 to + 150 o c r jc thermal resistance junction to case 0.3 o c/w r ja maximum thermal resistance junction to ambient (note 3) 50 o c/w package marking and ordering information device marking device package reel size tape width quantity fch47n60 fch47n60_f085 to-247 - - 30 units notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 5mh, i as = 18a, v dd = 100v during inductor charging and v dd = 0v during time in avalanche 3: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. d g s for ? current ? package ? drawing, ? please ? refer ? to ? the ? fairchild ? website ? at ? www.fairchildsemi.com/packaging g s d to-247 applications ? automotive on board charger ? automotive dc/dc converter for hev
fch47n60_f085 n-channel mosfet fch47n60_f085 rev. c2 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 600 - - v i dss drain to source leakage current v ds = 600v, t j = 25 o c --1 a v gs = 0v t j = 150 o c(note 4) - - 1 ma i gss gate to source leakage current v gs = 30v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 3.0 4.0 5.0 v r ds(on) drain to source on resistance i d = 47a, v gs = 10v t j = 25 o c -6479m t j = 150 o c(note 4) - 180 223 m c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 5900 8000 pf c oss output capacitance - 3200 4200 pf c rss reverse transfer capacitance - 177 - pf r g gate resistance f = 1mhz - 1 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 300v i d = 47a - 187 250 nc q g(th) threshold gate charge v gs = 0 to 2v - 12 18 nc q gs gate to source gate charge -40-nc q gd gate to drain ?miller? charge - 81 - nc switching characteristics drain-source diode characteristics notes: 4: the maximum value is specified by design at t j = 150c. product is not tested to this condition in production. t on turn-on time v dd = 300v, i d = 47a, v gs = 10v, r g = 25 - - 410 ns t d(on) turn-on delay time - 110 - ns t r rise time - 160 - ns t d(off) turn-off delay time - 540 - ns t f fall time - 125 - ns t off turn-off time - - 1000 ns v sd source to drain diode voltage i sd = 47a, v gs = 0v - - 1.4 v i sd = 23.5a, v gs = 0v - - 1.25 v t rr reverse recovery time i f = 47a, di sd /dt = 100a/ s, v dd =480v - 683 800 ns q rr reverse recovery charge - 21 28 uc
fch47n60_f085 n-channel mosfet fch47n60_f085 rev. c2 www.fairchildsemi.com 3 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature( o c) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 0 10 20 30 40 50 v gs = 10v i d , drain current (a) t c , case temperature( o c) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 100 1000 10000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fch47n60_f085 n-channel mosfet fch47n60_f085 rev. c2 www.fairchildsemi.com 4 figure 5. 1 10 100 1000 0.1 1 10 100 300 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c 100ms forward bias safe operating area figure 6. 24681 0 0 25 50 75 100 t j = -55 o c t j = 25 o c t j = 150 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 20v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 7. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 300 t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) forward diode characteristics figure 8. 0 4 8 12 16 20 0 30 60 90 120 150 5.5v v gs 15v top 10v 8v 7v 6v 5.5v bottom 80 p s pulse width tj=25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 9. 0 4 8 12 16 20 0 16 32 48 64 80 5v 5.5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 80 p s pulse width tj=150 o c saturation characteristics figure 10. 681 0 0 100 200 300 400 500 i d = 47a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) t j = 25 o c t j = 150 o c rdson vs gate voltage typical characteristics
fch47n60_f085 n-channel mosfet fch47n60_f085 rev. c2 www.fairchildsemi.com 5 figure 11. -80 -40 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 p s duty cycle = 0.5% max i d = 47a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized rdson vs junction temperature figure 12. normalized gate threshold voltage vs te mperature -80 -40 0 40 80 120 160 200 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature( o c) figure 13. -80 -40 0 40 80 120 160 200 0.8 0.9 1.0 1.1 1.2 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs junction temperature figure 14. 0.1 1 10 100 1 10 100 1000 10000 100000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 15. 0 40 80 120 160 200 0 2 4 6 8 10 v dd = 300v v dd = 240v i d = 47a v dd = 360v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage figure 16. typical characteristics
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